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Description
Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDD8896 . FDD8896 . TO252-3. (DPAK_GEM). Jul 18, 2016. 1.0. GEM. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDD8896 . TO252- 3 Page 1. Semiconductor Components Industries, LLC, 2013. September, 2013 Rev. 7. 1. Publication Order Number: MJL21193/D. MJL21193 (PNP),. Feb 18, 2011 EQUATION 17: CALCULATION OF THE. MAJOR MAXIMUM. PARAMETERS. Based on Equation 17, FDD8896 is selected for Q1,. VDSS = 30V Nov 16, 2007 November 16, 2008. FDV302P_ND87Z. FDV302P. Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDD8896_NF080. FDD8896 .
| Part Number | FDD8896 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 94A DPAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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