Description
DATASHEET Nov 1, 2013 S. D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDL100N50F . Unit. VDSS. Jul 18, 2016 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDL100N50F . FDL100N50F . TO264-3. Jul 18, 2016. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDL100N50F .
Part Number | FDL100N50F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 500V 100A TO-264 |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 238nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2500W (Tc) |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 |
Package / Case | TO-264-3, TO-264AA |
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