Description
FDMA86251 : 150V Single N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This device has been designed to provide Jul 7, 2016 FDMA86251 . MLP-6 (2.0X2.0). (CuBW) (H). Jul 07, 2016. 1.0. HANA. 0.00944 g. Each. Manufacturing Process Information. Terminal Finish. Jan 13, 2017 FDMA86251 . MLP-6 (2.0X2.0) (CuBW) (H). HANA. HANA. 0.00944. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at.
Part Number | FDMA86251 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 150V 2.4A 6-MLP |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 363pF @ 75V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 2.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-MicroFET (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
FDMA86251
TI/ST
5000000
1
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