(4/5) based on 2 customer reviews
Description
Jan 8, 2016 FDMC8296 . MLP-8 (3.0X3.0. 1M) (AuBW) (H). Jan 08, 2016. 1.0. HANA. 0.025719 g. Each. Manufacturing Process Information. Terminal Finish. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMC8296 . MLP-8 (3.0X3.0 1M) (AuBW) (H). HANA. HANA. 0.025719. Mar 17, 2011 FDMC8296 . PARTIAL. Q. CSD16409Q3. The device has the SAME FUNCTIONALITY AND PINOUT as the competitors device but is NOT an MOSFET ( FDMC8296 ) excels at lighter load efficiency where switching losses dominate, while the lower RDS(ON) (FDMC8676) becomes more efficient at
| Part Number | FDMC8296 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 12A POWER33 |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1385pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 27W (Tc) |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
| Image |  |
FDMC8296
TI/ST
5000000
0.71
Hongkong Shengshi Electronics Limited
FDMC8296
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3710
1.9275
HK HEQING ELECTRONICS LIMITED
FDMC8296
TI/CC
35800
3.145
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDMC8296
TI?
3992
4.3625
IC WELL ELECTRONICS (HK) CO., LIMITED
FDMC8296
TI-BB
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5.58
Dan-Mar Components Inc.
