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Description
Jul 7, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDMS0312AS . FDMS0312AS . PQFN-8. (TFSnCuBW). Jul 07, 2016. Jan 13, 2017 FDMS0312AS . PQFN-8 (TFSnCuBW). GEM. GEM. 0.105957. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp.
Part Number | FDMS0312AS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 18A PT8 |
Series | PowerTrench, SyncFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1815pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 36W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image | ![]() |
FDMS0312AS
TI/ST
5000000
1.57
Hongkong Shengshi Electronics Limited
FDMS0312AS
TexasIns
3000
2.5525
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS0312AS
TI/CC
13050
3.535
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDMS0312AS
TI?
9000
4.5175
SUMMER TECH(HK) LIMITED
FDMS0312AS
TI-BB
2000
5.5
Yingxinyuan INT'L (Group) Limited