Rated 
(4/5) based on 12 customer reviews
(4/5) based on 12 customer reviews
Description
Jul 6, 2016 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDN308P . FDN308P . SSOT-3. (EutecticAuBW-G). FDN308P . PMV65XP. FDN327N. PMV56XN. FDN335N. PMV56XN. FDN336P. PMV65XP. FDN337N. PMV60EN. FDN338P. PMV65XP. FDN339AN. PMV30UN. Nov 16, 2007 FDN308P . Fairchild Semiconductor. May 16, 2008. November 16, 2008. FDT3612_NL. FDT3612. Fairchild Semiconductor. May 16, 2008.
| Part Number | FDN308P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 1.5A SSOT-3 |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 341pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 1.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Lowest Price: $0.95
Highest Price: $3.51
1 - 5 of 5 Record(s)
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TI-BB
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RX ELECTRONICS LIMITED
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TI/ST
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FDN308P
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FDN308P Ref.
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