(4/5) based on 18 customer reviews
Description
FDN340P Rev E1. Electrical Characteristics. TA = 25 C unless otherwise noted. Symbol. Parameter. Test Conditions. Min Typ Max Units. Off Characteristics. AGND. AGND. AG. ND. AGND. AG. ND. BC847-25. YELLOW. 470R/1K. 52K. 3. 12k7. 10n. 10n. 100K. FDN340P . 4k7. 5-1814832-1. AG. ND. 1K. 1K. 1K. 1K. 1K. F-H. 8.5. 10. K. 10. K. 10K. 10. K. 16MHz KX-7. FDN340P . GND. 100n. GND. +5V. LMV358IDGKR. LMV358IDGKR. C. D. 12. 06. -S. 01. 57. 5. USB MICRO. GND. Mar 26, 2009 A. +5V. +5V. 100n. GND. 1K. G. N. D. 1. 0. 0 n. NDT2955. FDN340P . LM358D. LM358D. 10k. 10k. GND. 100n. GND. +5V. 100n. +5V. 1K. GND. D. 8x1F-H8.5. 8x1F-H8.5. 8x1F-H8.5. +3V3. 8x1F-H8.5. GND. YELLOW. YELLOW. MF-MSMF050-2 500mA. YELLOW. G. N. D. FDN340P . GND. 100n. GND. +5V.
| Part Number | FDN340P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 2A SSOT3 |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 779pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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