Part Number | FDN86265P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET P-CH 150V 0.8A 3SSOT |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 75V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 800mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
FDN86265P
TI/ST
30000
0.66
Shenzhen Qiangneng Electronics Co., Ltd.
FDN86265P
TexasIns
35800
1.3725
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDN86265P
TI/CC
6000
2.085
ZY (HK) TECHNOLOGY LIMITED
FDN86265P
TI?
12000
2.7975
Yingxinyuan INT'L (Group) Limited
FDN86265P
TI-BB
105
3.51
FLOWER GROUP(HK)CO.,LTD