Description
Datasheet Nov 1, 2013 November 2013. FDP023N08B N-Channel PowerTren c h. . MO. SFE. T. 2013 Fairchild Semiconductor Corporation. FDP023N08B Rev. Mar 12, 2013 FDMS030N06B. 60 V. 3.0 m . 75 nC. 100 A. 85 nC. Power56. FDP023N08B . 75 V. 2.350 m . 150 nC. 242 A. 114 nC. TO-220. FDP027N08B. application using the FDP023N08 . It has about 30% lower turn-off energy when compared to the best. MOSFET available on the market, as shown in Fig. 6.
Part Number | FDP023N08B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 75V 120A TO-220-3 |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13765pF @ 37.5V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 245W (Tc) |
Rds On (Max) @ Id, Vgs | 2.35 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FDP023N08B
TI/ST
10000
0.47
HK HEQING ELECTRONICS LIMITED
FDP023N08B
TexasIns
3000
1.145
Shenzhen Qiangneng Electronics Co., Ltd.
FDP023N08B
TI/CC
9100
1.82
WIN AND WIN ELECTRONICS LIMITED
FDP023N08B
TI?
41657
2.495
N&S Electronic Co., Limited
FDP023N08B
TI-BB
11100
3.17
N&S Electronic Co., Limited