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Description
DATASHEET Nov 1, 2013 FDP036N10A . N-Channel PowerTrench. . MOSFET. 100 V, 214 A, 3.6 m . Features. RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 75 A. Jan 8, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP036N10A . FDP036N10A . TO220-3 (92.5-5-. 2.5DA_AlBW) (G). Jan 8, 2016 FDP036N10A . TO220-3 (92.5-5-2.5DA_AlBW) (G). FSSZ. FSSZ. 2.030182. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Mar 12, 2013 FDP036N10A . 100 V. 3.6 m . 89 nC. 214 A. 129 nC. TO-220. FDP045N10A. 100 V. 4.5 m . 57 nC. 164 A. 120 nC. TO-220. FDPF045N10A. May 31, 2011 The FDP083N15A_F102, FDB082N15A, and FDP036N10A n- channel PowerTrench MOSFETs provide 66% improved figure of merit, QG x
| Part Number | FDP036N10A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 100V TO-220AB-3 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7295pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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