Description
DATASHEET Oct 1, 2013 FDP3651U . Features. Applications. MOSFET Maximum Ratings TC = 25 C unless otherwise noted. N-Channel PowerTrench. . MOSFET. Jul 12, 2016 FDP3651U . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDP3651U . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ.
Part Number | FDP3651U |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 100V 80A TO-220AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5522pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FDP3651U
TI/ST
5100
0.56
HK HEQING ELECTRONICS LIMITED
FDP3651U
TexasIns
3000
1.735
Shenzhen Qiangneng Electronics Co., Ltd.
FDP3651U
TI/CC
200000
2.91
Shenzhen WTX Capacitor Co., Ltd.
FDP3651U
TI?
5500
4.085
AAC Technology Co., Limited
FDP3651U
TI-BB
2710
5.26
Nosin (HK) Electronics Co.