Description
Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDP51N25 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. Apr 28, 2015 FDP51N25 . FDP51N25 . TO220-3 (92.5-5-. 2.5DA_AlBW).csv. Apr 28, 2015. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information.
Part Number | FDP51N25 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 250V 51A TO-220 |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3410pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 320W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 25.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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