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Description
FDP7030BL /FDB7030BL Rev D1(W). Electrical Characteristics. TA = 25 C unless otherwise noted. Symbol. Parameter. Test Conditions. Min Typ Max Units. Oct 22, 2015 FDP7030BL . TO220-3 (92.5-5-. 2.5DA_AlBW). Oct 22, 2015. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDP7030BL . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. MOSFET, N, logic,. TO-220_EXPOSED_PAD_HEATSINK. Fairchild. Semiconductor. FDP7030BL . FEC 9845151. 2. Q3, Q4. NPN small signal transistor, SOT-23, TO-220_EXPOSED_PAD_HEATSINK, MOSFET,. N logic. Fairchild. FDP7030BL . FEC 9845151. 2. Q6, Q8. SOT23, N-channel, enhancement mode,. TMOSFET.
| Part Number | FDP7030BL |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 60A TO-220 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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