Part Number | FDS3512 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 80V 4A 8SOIC |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 634pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS3512
TI/ST
693
0.18
Yingxinyuan INT'L (Group) Limited
FDS3512
TexasIns
40221
1.3825
N&S Electronic Co., Limited
FDS3512_NL
TI/CC
511000
2.585
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDS3512
TI?
11249
3.7875
N&S Electronic Co., Limited
FDS3512
TI-BB
4868000
4.99
Shenzhen WTX Capacitor Co., Ltd.