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Description
Jul 14, 2015 FDS3672 . SOIC-8 (CuBW). Jul 14, 2015. 1.0. SUBCON. 0.087918 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Mar 24, 2015 FDS3672 . SOIC-8 (CuBW).csv. Subcon. Subcon. 0.087918. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. 2010 9 21 General Business Information. Petr Frgal. 2006. SCH-26449. R86. 0.10. R88. 0.10. R85. 0.10. Q4. FDS3672 . 3. 4. 76. 8. 5. 2 1. Q3. FDS3672 . 3. Aug 1, 2007 FDS3672 -T. QR4. FDS3672 -T. C52. 0.1uF. C52. 0.1uF. U3. ISL6740IBZ. U3. ISL6740IBZ. OUTA. 1. GND. 2. SCSET. 3. CT. 4. SYNC. 5. CS. 6. Oct 8, 2007 Fairchild FDS3672 FETs, rated at 100V and 7.5A. (rDS(ON) = 22m ), were selected for the half-bridge switches. The synchronous rectifier
| Part Number | FDS3672 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 100V 7.5A 8-SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2015pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 7.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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