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Description
FDS6570A . Single N-Channel 2.5V Specified PowerTrench MOSFET. General Description. This N-Channel 2.5V specified MOSFET is produced. Jul 6, 2016 FDS6570A . SOIC-8 (CuBW-Gs). Jul 06, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jul 6, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6570A . SOIC-8 (CuBW-Gs). GEM. GEM. 0.090751. ( FDS6570A ). 3.5A. 2.5V. B. A. C. MAX8704 toc12. 1.50V. 1.45V. 1.8V. 1.7V. A. LOAD: 0.5A - 3.5A, 3A/div. B. DRV, 0.5V/div. VIN = 1.8V. D. C. INPUT, 100mV/div. Feb 23, 2011 C379. 22UF. C379. 22UF. C360. 10UF. C360. 10UF. U67 FDS6570A . S2. 2. S1. 1. G. 4. S3. 3. D1. 5. C383. 10UF. C383. 10UF. P12. MINIDIN 4.
| Part Number | FDS6570A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 20V 15A 8SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 15A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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