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Description
Datasheet Mar 1, 2005 C/W. Package Marking and Ordering Information. Device Marking. Device. Reel Size. Tape width. Quantity. FDS6679 . FDS6679 . 13. 12mm. Dec 11, 2015 FDS6679 . SOIC-8 (CuBW-Gs). Dec 11, 2015. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6679 . SOIC-8 Typical Operating Characteristics for a scope shot showing MAX1538 turn-on and turn-off times when dri- ving FDS6679 MOSFETs. The MAX1538 typically turns. Central Semiconductor 2N7002. Top mark = 702. P1 P8. 8. 30V P-channel MOSFETs (8-pin SO). Fairchild FDS6679 . R1. 1. 100k 5% resistor (0402). R2, R3.
| Part Number | FDS6679 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 30V 13A 8SOIC |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3939pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 13A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
FDS6679
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10000
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