(5/5) based on 5 customer reviews
Description
FDS8447 Single N-Ch annel PowerTrench. . MOSFET. FDS8447 Rev.B www. fairchildsemi.com. 2. Electrical Characteristics TJ = 25 C unless otherwise noted. Sep 12, 2016 FDS8447 . SOIC-8 (CuBW-Gs). Sep 12, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS8447 . SOIC-8 Jul 24, 2014 FDS8447 . Fairchild. For synchronization to an external clock, remove jumper. JP2 and apply sync signal on terminal SYNC. Design files for this 2. FDS8447 . Q3,Q4. MOSFET, NChan, 40V, 50A, 4.5. S0-8. FDS8447 . Vishay- millohm. Siliconix. 2. 2. 2. 2. TP0610K. Q7,Q10. Mosfet, P-Ch, 60V, Rds 6 ohms, Id.
| Part Number | FDS8447 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 40V 12.8A 8-SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 12.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
Hot Offer
FDS8447
TI?
2500
4.6725
HK HORIZON MICROELECTRONICS LIMITED
FDS8447
TI-BB
33280
6.17
NICE UPWAY INTERNATIONAL LIMITED
FDS8447
TI/ST
2500
0.18
RX ELECTRONICS LIMITED
FDS8447
TexasIns
89101
1.6775
Cicotex Electronics (HK) Limited
FDS8447
TI/CC
2809
3.175
Nosin (HK) Electronics Co.
