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Description
Datasheet VOUT = 1.5V. VOUT = 1.2V. INDUCTOR: CDRH105RNP-3R3N. MOSFET: FDS8880 . 09357-005. Figure 5. Efficiency at VIN = 12 V, fSW = 600 kHz, FPWM. 0. 10. Fairchild Semiconductor FDS8880 . Vishay Si4386DY. International Rectifier IRF7821PBF. N9. 1 n-channel MOSFET (SOT23). Central Semi 2N7002, lead- free. Fairchild FDS8880 . N4. 1. 30V, 8.6A/6.3A n-channel MOSFET. (8 SO). Fairchild FDS6982AS. P GN D ( x3) , V IN ,. VOUT1, VOUT2. 6. Uninsulated banana jacks. Maxim Integrated. Typical Application Circuits. 3300pF. 390pF. 33pF. MAX15023. Q3. FDS8880 . Q2. FDS8880 . Q5. FDS6982AS-Q2. Q4. FDS6982AS-Q1. Q1. 2. Q1, Q2. N-Channel MOSFET, VDS = 30 V, RDS(ON) = 9.6 m ,. ID = 10.7 A, SO8. FDS8880 /Fairchild. 7. R1, R3, R6, R8, R9, R14, R20. Optional, resistor, 0603.
| Part Number | FDS8880 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 30V 11.6A 8SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1235pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 11.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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