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Description
Datasheet Jul 1, 2008 FDW2520C . Complementary PowerTrench.. MOSFET. General Description. This complementary MOSFET device is produced using. If using the recommended FDW2520C transistors, it will be necessary to add an additional 2.2 nF of capacitance from the gate to the drain of the PMOS transistor Fairchild FDW2520C (8-pin TSSOP). N-FET 18m , QG = 14nC, VDSMAX = 20V,. P-FET 35m , QG = 14nC, VDSMAX = 20V. N-CHANNEL MOSFETs. M2. Fairchild FDW2520C (8-pin TSSOP). N-FET 18m , QG = 14nC, VDSMAX = 20V,. P-FET 35m , QG = 14nC, VDSMAX = 20V. N-CHANNEL MOSFETs. M2.
| Part Number | FDW2520C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET N/P-CH 20V 6A/4.4A 8TSSOP |
| Series | PowerTrench |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.4A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325pF @ 10V |
| Power - Max | 600mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Image |  |
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