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Description
Apr 1, 2014 MO. SFE. T. FDY102PZ Rev.B3 www.fairchildsemi.com. 2. Electrical Characteristics TJ = 25 C unless otherwise noted. Off Characteristics. Jul 8, 2016 FDY102PZ . SOT523F-3 (G). Jul 08, 2016. 1.0. AUK-KT. 0.002606 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jul 8, 2016 FDY102PZ . SOT523F-3 (G). AUK-KT. AUK-KT. 0.002606. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. SOT523-3. Diodes Incorporated. Si2301CDS. 0.48. 2.80 x 2.81. SOT23. Vishay . Si2315BDS. 0.60. 2.45 x 2.69. SOT23. Vishay. FDY102PZ . 0.46. 1.70 x 1.70. Viable PMOS options include e.g.. NTA4151P (e.g. OnSemi), FDN336P,. FDY102PZ (e.g. Fairchild). Suitable dual package NMOS options are e.g. PMGD400.
| Part Number | FDY102PZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 20V 0.83A SC89-3 |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 830mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 830mA, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-3 |
| Package / Case | SC-89, SOT-490 |
| Image |  |
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