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Description
: HKIN - Datasheet (Result Page) 3 (0.33 ) (3) FQD17P06 / FQU17P06 FQD17P06 / FQU17P06 Apr 1, 2014 Essentially independent of operating temperature typical characteristics. FQD17P06TM . FQD17P06. Symbol. Parameter. Test Conditions. Min. Google - 5/2015 PDF RoHS IPC1752 PDF RoHS IPC1752 Mar 24, 2015 FQD17P06TM . TO252-3. (NiLFAlBW).csv. Mar 24, 2015. 1.0. Subcon. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Google - 5/2015 PDF RoHS/REACH/JIG - Fairchild Semiconductor PDF RoHS/REACH/JIG - Fairchild Semiconductor Aug 8, 2014 MSL. Rating. FQD17P06TM . TO-252-3. (DPAK_GEM). SUZHOU. SUBCONTRACTOR. 0.3298370. 1. Terminal Finish. Base Alloy. Green Status. Google - 5/2015 1 : HKIPortal_getReSize(); HKIPortal_attachEvent(window, load, HKIPortal_getReSize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: . Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}>
| Part Number | FQD17P06TM |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET P-CH 60V 12A DPAK |
| Series | QFET |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Rds On (Max) @ Id, Vgs | 135 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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