Part Number | FQD5N20LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 200V 3.8A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD5N20LTM
TI/ST
16000
0.8
Finestock Electronics HK Limited
FQD5N20LTM
TexasIns
10000
1.95
Xinye International Technology Limited
FQD5N20LTM
TI/CC
11305
3.1
Ande Electronics Co., Limited
FQD5N20LTM
TI?
8000
4.25
Cicotex Electronics (HK) Limited
FQD5N20LTM
TI-BB
20000
5.4
Yingxinyuan INT'L (Group) Limited