Part Number | FQD6N25TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 250V 4.4A DPAK |
Series | QFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD6N25TM
TI/ST
55100
1.02
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQD6N25TM
TexasIns
9000
1.5575
SUMMER TECH(HK) LIMITED
FQD6N25TM
TI/CC
1485
2.095
Lionfly Tech (HK) International Group Co., Limited
FQD6N25TM
TI?
2056
2.6325
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FQD6N25TM
TI-BB
5000
3.17
F-power Electronics Co