Description
Datasheet Nov 1, 2013 MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP32N20C . FQPF32N20C. Unit. Mar 24, 2015 FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQP32N20C . FQP32N20C . TO220-3 (93.5-5-. 1.5DA_AlBW).csv. Mar 24, 2015. 1.0.
Part Number | FQP32N20C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 200V 28A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP32N20C
TI/ST
1000
1.86
TLF ELECTRONICS LTD
FQP32N20C
TexasIns
29186
2.66
HK HEQING ELECTRONICS LIMITED
FQP32N20C
TI/CC
4572
3.46
Ande Electronics Co., Limited
FQP32N20C
TI?
9000
4.26
SUMMER TECH(HK) LIMITED
FQP32N20C
TI-BB
25000
5.06
CIS Ltd (CHECK IC SOLUTION LIMITED)