Part Number | FQP4N20L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 200V 3.8A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP4N20L
TI/ST
180
0.16
SUNTOP SEMICONDUCTOR CO., LIMITED
FQP4N20L
TexasIns
1000
0.9425
KYO Inc.
FQP4N20L
TI/CC
5006
1.725
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FQP4N20L
TI?
9000
2.5075
SUMMER TECH(HK) LIMITED
FQP4N20L
TI-BB
200000
3.29
Shenzhen WTX Capacitor Co., Ltd.