Part Number | FQP9N30 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 300V 9A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 98W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP9N30
TI/ST
815
0.84
HK HEQING ELECTRONICS LIMITED
FQP9N30
TexasIns
16000
1.545
Finestock Electronics HK Limited
FQP9N30
TI/CC
3425
2.25
Nosin (HK) Electronics Co.
FQP9N30
TI?
9000
2.955
SUMMER TECH(HK) LIMITED
FQP9N30
TI-BB
200
3.66
Gallop Great Holdings (Hong Kong) Limited