Part Number | FQPF7N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 800V 3.8A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF7N80
TI/ST
9079
0.66
Belt (HK) Electronics Co
FQPF7N80
TexasIns
3358
1.825
Nosin (HK) Electronics Co.
FQPF7N80**
TI/CC
3130
2.99
Ande Electronics Co., Limited
FQPF7N80
TI?
8342
4.155
ATLANTIC TECHNOLOGY LIMITED
FQPF7N80
TI-BB
3251
5.32
Cicotex Electronics (HK) Limited