Part Number | FQU2N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 1.9A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU2N60CTU
TI/ST
180
0.36
SUNTOP SEMICONDUCTOR CO., LIMITED
FQU2N60CTU
TexasIns
9000
1.3675
SUMMER TECH(HK) LIMITED
FQU2N60CTU
TI/CC
176
2.375
WIN AND WIN ELECTRONICS LIMITED
FQU2N60CTU
TI?
11010
3.3825
Ande Electronics Co., Limited
FQU2N60CTU
TI-BB
2229
4.39
Yingxinyuan INT'L (Group) Limited