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Description
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high Sep 9, 2011 FGH40N60SMD. FGH40N60UFD. FGH40N60SFD. HGTG20N60A4D . Tc= 125deg.C. Vge=15V. Collector-Emitter Voltage, Vce(sat)[V]. Figure 4. Jan 8, 2016 HGTG20N60A4D . TO247-3. FSSZ. FSSZ. 5.456725. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. MOSFETs with power ratings of up to IC = 150 A and. Drives IGBTs up to IC = 150 A, VCE = 600 V. VCE = 600 V. Input TTL logic and output power stage. Jun 13, 2013 The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the.
| Part Number | HGTG20N60A4D |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Texas Instruments |
| Description | IGBT 600V 70A 290W TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 70A |
| Current - Collector Pulsed (Icm) | 280A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Power - Max | 290W |
| Switching Energy | 105µJ (on), 150µJ (off) |
| Input Type | Standard |
| Gate Charge | 142nC |
| Td (on/off) @ 25°C | 15ns/73ns |
| Test Condition | 390V, 20A, 3 Ohm, 15V |
| Reverse Recovery Time (trr) | 35ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Image |  |
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