Description
HGTP10N120BN, FSC, TO-220-3, IGBT 1200V 35A 298W TO220AB, Discrete Semiconductor Products, IGBTs - Single
Part Number | HGTP10N120BN |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Texas Instruments |
Description | IGBT 1200V 35A 298W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298W |
Switching Energy | 320µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
HGTP10N120BN
TI/ST
12280
1.5
HK HEQING ELECTRONICS LIMITED
HGTP10N120BN
TexasIns
9120
2.4875
ONSTAR ELECTRONICS CO., LIMITED
HGTP10N120BN 10N120BN
TI/CC
20000
3.475
Ande Electronics Co., Limited
HGTP10N120BN
TI?
2562
4.4625
CIS Ltd (CHECK IC SOLUTION LIMITED)
HGTP10N120BN
TI-BB
3425
5.45
Nosin (HK) Electronics Co.