(5/5) based on 3 customer reviews
Description
IPP60R520E6, IPA60R520E6 . Final Data Sheet. 2. Rev. 2.0, 2010-04-09. 1. Description. CoolMOS# is a revolutionary technology for high voltage power. Material Content Data Sheet. Sales Product Name. IPA60R520E6 . Issued. 29. August 2013. MA#. MA000837402. Package. PG-TO220-3-111. Weight*. 2240.01 IPA60R520E6 . 450. IPD60R450E6. IPP60R450E6. IPA60R450E6. 380. IPP60R380E6. IPA60R380E6. 280. IPP60R280E6. IPA60R280E6. IPW60R280E6. 190. IPA60R520E6 . 450. IPD60R450E6. IPP60R450E6. IPA60R450E6. 380. IPD60R380E6. IPP60R380E6. IPA60R380E6. 280. IPP60R280E6. IPA60R280E6. IPA60R520E6 . IPD60R520E6. 600. IPP60R600E6. IPA60R600E6. IPD60R600E6. 750. IPP60R750E6. IPA60R750E6. IPD60R750E6. CoolMOS portfolio.
| Part Number | IPA60R520E6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 8.1A TO220 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Rds On (Max) @ Id, Vgs | 520 mOhm @ 2.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
IPA60R520E6
TI/ST
5000
1.83
Zhaoxin Electronic Limited
IPA60R520E6
TexasIns
12500
2.99
Bonase Electronics (HK) Co., Limited
IPA60R520E6
TI/CC
15
4.15
KWANGHUA TECHNOLOGY LIMITED
IPA60R520E6
TI?
55525
5.31
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IPA60R520E6
TI-BB
200000
6.47
Shenzhen WTX Capacitor Co., Ltd.
