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Description
Material Content Data Sheet. Sales Product Name. IPA65R380E6 . Issued. 29. August 2013. MA#. MA001039642. Package. PG-TO220-3-253. Weight*. 2134.33 SPP07N65C3. IPP65R600E6. SPA07N65C3. IPA65R600E6. SPI07N65C3. IPI65R600C6. 0.38 . SPP11N65C3. IPP65R380E6. SPA11N65C3. IPA65R380E6 . 24. Juni 2010 Geh use) und IPA65R380C6 / IPA65R380E6 (380 m in einem TO220 FullPAK) sind verf gbar. Die Volumenfertigung dieser ersten Bauteile Jun 24, 2010 IPA65R380C6 / IPA65R380E6 (380m in a TO220 FullPAK) are available now. Volume production of these first parts of the new C6/E6 650V
| Part Number | IPA65R380E6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 650V 10.6A TO220 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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