Part Number | IPA65R650CEXKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 650V TO-220-3 |
Series | CoolMOS,CE |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 28W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Full Pack |
Package / Case | TO-220-3 Full Pack |
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IPA65R650CEXKSA1
TI/ST
21795
0.53
Useta Tech (HK) Limited
IPA65R650CEXKSA1
TexasIns
8000
1.1025
Shenzhen HTIC Electronic Co.,Ltd
IPA65R650CEXKSA1
TI/CC
50000
1.675
HK KK Int'l Co.,Limited
IPA65R650CEXKSA1
TI?
8000
2.2475
YK TECH ELECTRONIC CO., LIMITED
IPA65R650CEXKSA1
TI-BB
458600
2.82
Shenzhen WTX Capacitor Co., Ltd.