Rated 
(5/5) based on 18 customer reviews
(5/5) based on 18 customer reviews
| Part Number | IPB027N10N3GATMA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 100V 120A TO263-3 |
| Series | OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
Lowest Price: $0.44
Highest Price: $3.7
1 - 5 of 5 Record(s)
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Part Number:
IPB027N10N3GATMA1
Brand:
TI/ST
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1000
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Company:
Sunrise Electronics Group Limited
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Part Number:
IPB027N10N3GATMA1
Brand:
TexasIns
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1.255
Company:
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
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Part Number:
IPB027N10N3GATMA1
Brand:
TI/CC
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8000
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Company:
ShenZhen JunDaWei Electronic Co.,Ltd.
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Part Number:
IPB027N10N3GATMA1
Brand:
TI?
D/C:
22+
Qty:
1000
Price (USD):
2.885
Company:
HALEY INNOVATIONS TECHNOLOGY CO.,LIMITED
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Part Number:
IPB027N10N3GATMA1
Brand:
TI-BB
D/C:
Qty:
10000
Price (USD):
3.7
Company:
MARVEL INTERNATIONAL GROUP CO.,LTD.
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IPB027N10N3GATMA1 Ref.
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