Rated 
(5/5) based on 9 customer reviews
(5/5) based on 9 customer reviews
| Part Number | IPB042N10N3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 100V 100A TO263-3 |
| Series | OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
Lowest Price: $0.43
Highest Price: $3.66
1 - 5 of 5 Record(s)
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IPB042N10N3 G
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Part Number:
IPB042N10N3 G
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TexasIns
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