Description
Oct 7, 2015 3 Safe operating area. 4 Max. transient thermal impedance. I D = f(V DS); T C = 25 C; D = 0. Z thJC = f(t p) parameter: t p parameter: D =t p/T. Power Semiconductors. Automotive N-Channel MOSFETs. 40 V. IPB180N04S4- 00. SP000646176. IPB180N04S400ATMA1 . PG-TO263-7-3. 40. 0.98. 2.0 4.0.
Part Number | IPB180N04S400ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 40V 180A TO263-7-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs | 286nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 22880pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 0.98 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab), TO-263CB |
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IPB180N04S400ATMA1
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7500
1.72
Magic Intertrade Co., Limited
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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2688
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Shenzhen Hongying Micro Technology Co., Ltd
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TI?
2100
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Ande Electronics Co., Limited
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