Part Number | IPD040N03LGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 90A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD040N03LGATMA1
TI/ST
50
1.63
Well Sources Technology Co.Ltd
IPD040N03LGATMA1
TexasIns
3000
2.6325
HONGKONG SINIKO ELECTRONIC LIMITED
IPD040N03LGATMA1
TI/CC
25860
3.635
YU TUO (HONGKONG) TRADING CO., LIMITED
IPD040N03LGATMA1
TI?
5000000
4.6375
Hongkong Shengshi Electronics Limited
IPD040N03LGATMA1
TI-BB
12000
5.64
MeiChuangXinKe (SZ) Electronics Co., Ltd.