Part Number | IPD060N03LGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 30V 50A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD060N03LGATMA1
TI/ST
2500
0.91
HK KK Int'l Co.,Limited
IPD060N03LGATMA1
TexasIns
1000
1.405
Xinnlinx Electronics Pte Ltd
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TI/CC
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UCAN TRADE (HK) LIMITED
IPD060N03LGATMA1
TI?
136407
2.395
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TI-BB
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Ande Electronics Co., Limited