Part Number | IPD26N06S2L35ATMA2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 55V 30A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 26µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 621pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-11 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD26N06S2L35ATMA2
TI/ST
16000
1.01
Finestock Electronics HK Limited
IPD26N06S2L35ATMA2
TexasIns
220360
1.9025
Cinty Int'l (HK) Industry Co., Limited
IPD26N06S2L35ATMA2
TI/CC
402792
2.795
Shenzhen WTX Capacitor Co., Ltd.
IPD26N06S2L35ATMA2
TI?
48500
3.6875
Ande Electronics Co., Limited
IPD26N06S2L35ATMA2
TI-BB
5000000
4.58
Hongkong Shengshi Electronics Limited