Rated 
(5/5) based on 18 customer reviews
(5/5) based on 18 customer reviews
| Part Number | IPD30N06S2-15 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 55V 30A TO252-3 |
| Series | OptiMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1485pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
Lowest Price: $1.55
Highest Price: $5.63
1 - 5 of 5 Record(s)
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Part Number:
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Shenzhen Fuxinwei Semiconductor Co., Ltd
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IPD30N06S215
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Useta Tech (HK) Limited
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TexasIns
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Part Number:
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TI?
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200000
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Company:
Shenzhen WTX Capacitor Co., Ltd.
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IPD30N06S215 Ref.
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