Part Number | IPD60R3K3C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 600V 1.7A TO252-3 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 93pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 18.1W (Tc) |
Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
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