Part Number | IPD80R1K4CEATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 800V 3.9A TO252-3 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 240µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD80R1K4CEATMA1
TI/ST
5000000
1.41
Hongkong Shengshi Electronics Limited
IPD80R1K4CEATMA1
TexasIns
2600
2.37
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IPD80R1K4CEATMA1
TI/CC
2688
3.33
Shenzhen Hongying Micro Technology Co., Ltd
IPD80R1K4CEATMA1
TI?
20060
4.29
ODK(HK) ELECTRONICS TECHNOLOGY CO.LIMITED
IPD80R1K4CEATMA1
TI-BB
3000
5.25
HONGKONG SINIKO ELECTRONIC LIMITED