Part Number | IPD85P04P407ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH TO252-3 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6085pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 88W (Tc) |
Rds On (Max) @ Id, Vgs | 7.3 mOhm @ 85A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-313 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD85P04P407ATMA1
TI/ST
2688
0.31
Shenzhen Hongying Micro Technology Co., Ltd
IPD85P04P407ATMA1
TexasIns
18034
1.3275
Useta Tech (HK) Limited
IPD85P04P407ATMA1
TI/CC
2500
2.345
HK HEQING ELECTRONICS LIMITED
IPD85P04P407ATMA1
TI?
57200
3.3625
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD85P04P407ATMA1
TI-BB
44363
4.38
Shenzhen WTX Capacitor Co., Ltd.