(5/5) based on 7 customer reviews
Description
MOSFET 2N-CH 8TDSON Series: Automotive, AEC-Q101, OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25～C: 20A Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.1V @ 25米A Gate Charge (Qg) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) @ Vds: 1755pF @ 25V Power - Max: 60W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4 (5.15x6.15)
| Part Number | IPG20N10S4L22ATMA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Texas Instruments |
| Description | MOSFET 2N-CH 8TDSON |
| Series | Automotive, AEC-Q101, OptiMOS |
| Packaging | 2 N-Channel (Dual) |
| FET Type | |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
| Power - Max | 60W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Image |  |
IPG20N10S4L22ATMA1
TI/ST
18147
0.23
Useta Tech (HK) Limited
IPG20N10S4L22ATMA1
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8912
0.4825
Shenzhen Hongying Micro Technology Co., Ltd
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TI/CC
1350
0.735
HK HEQING ELECTRONICS LIMITED
IPG20N10S4L22ATMA1
TI?
15000
0.9875
Shenzhen Tecrutter Technology Co. , Ltd.
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
