Part Number | IPP04CN10NG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 100V 100A TO220-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
IPP04CN10NG
TI/ST
21458
0.39
Useta Tech (HK) Limited
IPP04CN10NG
TexasIns
1500
1.28
HK HEQING ELECTRONICS LIMITED
IPP04CN10NG
TI/CC
5026
2.17
Yingxinyuan INT'L (Group) Limited
IPP04CN10NG
TI?
2490
3.06
Cicotex Electronics (HK) Limited
IPP04CN10NG**
TI-BB
49800
3.95
CIS Ltd (CHECK IC SOLUTION LIMITED)