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Description
GHLA@M. GUdQ\ HhYTU LU]YS_^TeSd_b AYU\T @VVUSd MbQ^cYcd_b. >__\ GHLn >6. 6++N >__\GHLn >6 I_gUb MbQ^cYcd_b. DIx6+K099>6 ?QdQ LXUUd. 1. 2. 3. Material Content Data Sheet. Sales Product Name. IPP60R099C6 . Issued . 29. August 2013. MA#. MA001139898. Package. PG-TO220-3-1. Weight*. IPP60R099C6 . IPP60R160P6. IPP60R125C6. IPP60R190P6. IPP60R160C6. IPL60R180P6. IPP60R190C6. 650V. IPP65R110CFD. IPP65R150CFD. 3 - On-state voltage drop vs. temperature of two devices operated at the same current density. The IPP60R099C6 is a super-junction power MOSFET while the. IPP60R099C6 . IPA60R099C6. IPW60R099C6. 70. IPW60R070C6. 41. IPW60R041C6. 600V CoolMOS E6 Products. RDS(on) [m ]. DPAK (TO-252). TO-220.
| Part Number | IPP60R099C6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 37.9A TO220 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Gate Charge (Qg) (Max) @ Vgs | 119nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Rds On (Max) @ Id, Vgs | 99 mOhm @ 18.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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