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Description
DATASHEET Jun 7, 2013 2. 600V CoolMOS P6 Power Transistor. IPP60R190P6 . Rev. 2.0, 2013-06-07. Final Data Sheet tab. TO-220. Drain. Pin 2, tab. Gate. Pin 1. May 5, 2014 600V CoolMOS P6 Power Transistor. IPW60R190P6, IPB60R190P6, IPP60R190P6 ,. IPA60R190P6. Rev. 2.2, 2015-07-10. Final Data Sheet. 300W PFC Evaluation Board IPP60R190P6 with CCM PFC controller ICE3PCS01G. 2. Application Note AN 2013-03. V1.0 03 2013. Edition 2011-02- 02. Da ta shee tlimitation +30 V. 50. 40. 30. 20. 10. 0. -10. -20. -30. -40. -50. 10. 20. 30. 40. 50. 60. IPP60R199CP. IPP60R190E6. IPP60R190P6 . CoolMOS E6. Oct 9, 2015 technology IPP60R190P6 600V Power MOSFET on the primary side and 600W 12 V LLC analog version with CoolMOS P6, IPP60R190P6
| Part Number | IPP60R190P6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 600V 20.2A TO220 |
| Series | CoolMOS,P6 |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 630µ |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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