![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
Description
Feb 20, 2014 Page 1. MOSFET. Metal Oxide Semiconductor Field Effect Transistor. OptiMOSTM. OptiMOSTM Power-Transistor, 60 V. IPT007N06N.
Part Number | IPT007N06NATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Texas Instruments |
Description | MOSFET N-CH 60V 300A 8HSOF |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.3V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs | 216nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 16000pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 0.75 mOhm @ 150A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-HSOF-8-1 |
Package / Case | 8-PowerSFN |
Image | ![]() |
Hot Offer
IPT007N06NATMA1
TI?
5000
1.6775
Shenzhen Xinxin Intelligent Electronics Co., Ltd
IPT007N06NATMA1
TI-BB
10000
2.23
Shenzhen Zhongnuoxin Electronics Co., Ltd.
IPT007N06NATMA1
TI/ST
180
0.02
SUNTOP SEMICONDUCTOR CO., LIMITED
IPT007N06NATMA1
TexasIns
10000
0.5725
ACHIEVE ELECTRONICS CO., LIMITED
IPT007N06NATMA1
TI/CC
11300
1.125
N&S Electronic Co., Limited