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Description
2. 650V CoolMOS CFD2 Power Transistor. IPW65R080CFD . Rev. 2.4, 2011-09 -27. Final Data Sheet. TO-247 drain pin 2 gate pin 1 source pin 3. 1 Description. 800. 400. 300. 200. 100. 0. 600. 800. T=25 C; lf=20A; Rg, d=5.6 ; Ugs=13V. U [V]. 400. 200. 0 t [ s]. SPW47N60CFD. Comp2 43A. IPW65R080CFD Mar 14, 2013 (IFX board) using the new CoolMOSTM IPW65R080CFD . The main features and benefits of this new. Superjunction MOSFET are documented IPW65R080CFD . Comp2 600 V. Less Voltage Overshoot. Limited voltage overshoot by CFD2 during hard commutation of conducted body diode. Improved telecom servers. All the measurements and comparisons are done with the IPW65R080CFD and. SPW47N60CFD in the full bridge (MOSFET A, B, C, D).
| Part Number | IPW65R080CFD |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Texas Instruments |
| Description | MOSFET N-CH 700V 43.3A TO247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 43.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.76mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5030pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 17.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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